High Speed 1.1-µm-Range InGaAs-Based VCSELs
نویسندگان
چکیده
We have developed InGaAs-based VCSELs operating around 1.1 μm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25 Gbps 100◦C error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3,000 hours under operation temperature of 150◦C and current density of 19 kA/cm2. We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24 GHz and a relaxation oscillation frequency of 27 GHz were achieved. 40 Gbps error-free operation was also demonstrated. key words: vertical-cavity surface-emitting lasers (VCSELs), optical interconnections, semiconductor lasers, tunnel junction, high-speed modulation
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ورودعنوان ژورنال:
- IEICE Transactions
دوره 92-C شماره
صفحات -
تاریخ انتشار 2009